When
Presenter:
Dr. Jeff Ivie
R&D, S&E, Physics
Sandia National Laboratories
Abstract:
As classical transistor features shrink beyond the 2 nm node and emerging quantum technologies require near-perfect materials & interfaces, the importance of being able to control and study material interactions at the atomic limit has become critical. One of the only ways to achieve this is using a technique referred to as Atomic Precision Advanced Manufacturing (APAM). Fundamentally, APAM consists of a series of surface chemistry reactions between a bare or functionalized Si surface and precursor molecules that produce the final material system of interest. Until recently, APAM devices relied exclusively on templates defined by highly reactive Si dangling bonds, generated by the removal of single atoms of a H-terminated surface (H-Si(100)) via a Scanning Tunneling Microscope (STM). The high reactivity of these bonds restricted the scope of chemistry available to ultra-high vacuum (UHV) compatible gaseous molecular precursors, with the donor PH3 almost exclusively being the molecule of interest.
In this talk, I will outline our research efforts to investigate precursor chemistries beyond PH3, including BCl3, B2H6, NH3, as well as surface templating chemistry utilizing halogen terminations (X-Si(100) where X = Cl, Br, or I). By exploring chemistries beyond exclusively donors, we open new possibilities for fabricating bipolar atomic scale devices, and I will discuss our efforts into developing a combined experimental and modeling framework for evaluating acceptor molecular precursors. Furthermore, I will analyze our recent work comparing NH3 vs PH3 donor chemistries and how seemingly identical precursors can result in drastically different device behaviors, driven by their corresponding surface chemistries. Alongside these investigations, I will examine explorations into the diverse chemistries enabled by alternative halogen resists, particularly combining their air-stability with both atomic layer deposition (ALD) and reactive ion etching (RIE) ex-situ processing. Finally, I will present our recent work demonstrating how the selectivity of a Br-Si(100) surface towards an alkene ALD precursor and resulting area-selective ZnO growth enables the first steps towards atomically-precise surface chemistry.
Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
Bio:
Dr. Ivie received his B.S. degree in Chemistry from Georgia College & State University in 2012. After graduating, he went on to receive his Ph.D. in Physical Chemistry from the University of Arizona under the guidance of Dr. Oliver Monti, studying the charge transport through single molecule junctions. After graduating in 2019, Dr. Ivie went on to join Sandia National Laboratories in Albuquerque, NM as a postdoctoral scholar then as a staff member in 2021, working primarily in developing APAM for advanced microelectronic and sensing technology within the Microsystems Engineering, Science and Applications (MESA) complex. Other research interests of his include testing and evaluating various quantum computing technologies as well as understanding novel electronic properties of highly disordered metallic alloys. Apart from research, Dr. Ivie enjoys craft beer brewing, hiking, and playing Magic the Gathering.
Hosted by: Dr. Oliver Monti